(dobré i špatné) sigma-konjugovaných polysilylenů.
Transkript
(dobré i špatné) sigma-konjugovaných polysilylenů.
-HGQRGLPHQ]LRQiOQtNHPtN F. Schauer Fakulta chemická VUT skupina fyziky O. Salyk, M. Weiter, I. Kuitka , N. Dokoupil, 02WHYHOa P. Horváth Polysilyleny þHVN\– polysilylenes (anglicky) Téze 3URþNHPtNVU$]QRXdimenzionalitou ? &KHPLHNHPtNXVU$]QRXdimenzionalitou 3. Vlastnosti vedoucí k aplikacím 3URþSOD]PD" 5. Degradace, metastabilita – rezisty? 3URþ" :+< 6LOLF RQV PRELOLW\DQGOXPLQHVFHQFH ' 6,/,&216" HOHFWURQV /80,1(6&(1&( 02%,/,7< F6L D6L+ " KROHV ' ' ' 9é92-9(/,.267,628ýÈ67(. YDFXXPGH YLFHV /6 , 9/6, P ,Q RUJDQLFV XSHUODWWLFHV 2UJDQLFPROHFXODUGHYLFHV <($5 1$126758.785< 7\S VWUXNWXU\ P 6\QWHWLFNi 6WUXNWXUD Y\WYR HQi VWUXNWXUD VWUXNWXUD PLNURREUiE QtP HU\WKURF\W\ (OHNWURPDJQHWLFNp VSHNWUXP %LRORJLFNi ,QIUDþHUYHQp WUDQ]LVWRU GUiW EDNWHULH YLGLWHOQp VDYF$ EXQ þQi MiGUD KUDQLFH UR]OLãHQt GpOND WDEiNRYpKR ULERVRP NYDQWRYp WHþN\ ^ IXOOHUHQ F KHPRJORELQ LQ]XOLQ QP $ s s s FKROHVWHURO KUDQLFH UR]OLãHQt X HOHNWURQRYp OLWRJUDILH QDIWDOHQ EHQ]HQ GpOND && YD]E\ []iHQt ãt ND WXQHORYDFt EDULpU\ X -RVHSKVRQRYD XOWUDILDORYp X IRWROLWRJUDILH PR]DLNRYpKR YLUX VXSUDYRGLYpKR S HFKRGX ]iHQt Text proorientaci 2. Chemie 1D-'NHPtNX Silicons with different dimensionality 1D 10DWVXPRWR-SQ-$SSO3K\V 2D 3D 3D electron structure /%UXV /XPLQHVFHQFH RI 6LOLFRQ 0DWHULDOV &KDKLQV 6KHHWV 1DQRZLUHV 0LFURFU\VWDOV DQG 3RURXV 6LOLFRQ -3K\V&KHP 2D electron structure /%UXV /XPLQHVFHQFH RI 6LOLFRQ 0DWHULDOV &KDKLQV 6KHHWV 1DQRZLUHV 0LFURFU\VWDOV DQG 3RURXV 6LOLFRQ -3K\V&KHP 1D electron structure /%UXV /XPLQHVFHQFH RI 6LOLFRQ 0DWHULDOV &KDKLQV 6KHHWV 1DQRZLUHV 0LFURFU\VWDOV DQG 3RURXV 6LOLFRQ -3K\V&KHP VIP Garrelt P. vandder Laan, et al, Charge Carrier Mobilities in Sutbstiuted Polysilylenes: Influence of Backbone Conformation, J.Phys. Chem. 100 (1996),5470 3. Vlastnosti a aplikace Text proorientaci TUNED LUMINESCENCE '6,/,&216SURVSHFW 89SRODUL]HGHOHFWUROXPLQHVFHQFH SRO\GLEXWK\OVLO\OHQH SRO\GLSKHQ\OVLO\OHQH SRO\GLKH[\OVLO\OHQH Text proorientaci ORDERING 'VLOLFRQPRELOLW\ SRO\GLQSHQW\OVLO\ODQH < 1 DND\D PD .+ LURR ND. 2ND DQ G 5 :H VW &+ 6L Q S. Nespurek, F. Schauer, and A. Kadashchuk : Visible Photoluminescence in Polysilanes, Chemical Monthly 132(2001),159-168, Fotoelektronové spektroskopie H e II Intensity [ a.u.] I n t e n s[ai t. yu . ] C 1s S i 2p A D2 A D1 S i 2s A 0 100 200 300 400 B in d in g e n e r g y [e V ] 500 600 10 15 20 Binding energy [eV] Fig. 2: A survey XPS spectrum from the pristine PMPSi; mind the absence of oxygen related lines [4] Fig.3: UV induced valence band spectra of the pristine PMPSi surface (A) and after (D1) and (D2) degradation steps using Xe I resonant irradiation [4] [4] J. Zemek, P. Jiricek, N. Dokoupil, F. Schauer, S. Nespurek: Electron spectroscopy of poly [methyl-phenylsilylene] films, to be published 2002. 3URþSODVPD" 89ODVHUDEODWLRQ 0 6 X ]X N L < 1 D ND WD + 1 DJ DL . * R WR 2 1 L VK L P X UD 7 2 N X WDQ L 0 DWH U 6F L ( Q JL Q HH U $ ODVHU&9' RFdischarge +1DJDL<1DNDWD06X]XNL72NXWDQL-0DWHU6FL 3/$60$ 7(&+1,48(686(' 5DGLR)UHTXHQF\3ODVPD(QKDQFHG&9' 0LFURZDYH)UHTXHQF\3ODVPD(QKDQFHG&9' 0RQRPHU +H 'LUHFWLRQDO FRXSOHU 'HSRVLWLRQ FKDPEHU 0DJQHWURQ 'LVFKDUJH FKDPEHU 6XEVWUDWH KROGHU 3XPSLQJ 7 KLV ZRUN LV VXS SRUWHG E\ (X URSHD Q & RPP LVV LR Q SU RJUD PP H & 267 :DYHJXLGH 7XQLQJ SLVWRQ 0DJQHWLF FRLOV 3ODVPDSRO\VLO\OHQHVOXPLQHVFHQFHYVFRQGLWLRQV ∗ σ−σ ∗ π−π a) pH+pmonomer ( Pa) S+SPRQRPHU3D 2 60+20 ∗ H[FLWRQσ−σ 3/H[FLWDWLRQDX 60+5 3/HPLVVLRQDX 60+30 60+10 E ZDYHOHQJWKλQP ZDYHOHQJWKλQP 0: 0: 0: 0: 0: VDPSOH IORZ UDWH RI + VFFP SUHVVXUH RI + 3D GHSRVLWLRQ SDUWLDO VXEVWUDWH SUHVVXUH SUHVVXUH RI WHPSHUDWXUH 3D PRQRPHU . 3D LQWHQVLW\DX 0LFUR ZDY HS ODVPD OXPLQHVFHQFH ZDYHOHQJWKλ>QP@ 0: 0: ³ 0: ³ 0: 0: 5DGLRIUHTXHQF\SODVPDOXPLQHVFHQFH 7KLVZRUN LVVXSSRUWHG E\ (XURSHDQ&RPPLVVLRQ SURJUDPPH&267 SODVPD SUHSDUHG 03K6L λ QP LQWHQ]LW\ D X ; P HPLV VLRQ ZDY HOHQ JWK H[FLWDWL RQ ZDY HOHQJWK λQ H[FLWDWLRQ ZDYHOHQJWK >QP@ HQHUJ\ >H9@ )OXRUHVFHQFH VSHFWUD HPLVVLRQ ZDYHOHQJWK >QP@ HQHUJ\ >H9@ P.Horvath, F.Schauer, I.Kuritka, O.Salyk, M.Weiter, N.Dokoupil, S.Nespurek and V. Fidler: Luminescence in organic silicons prepared from organic precursors in plasma discharges, Chemical Monthly 132(2001),177-184 , 1DQRSDUWLFOHVLQSODVPDVLOLFRQ 6L F. Schauer, I. Kuritka, N. Dokoupil and P. Horvath: Nanostructural effects in plasmatically prepared polysilylanes , to be published in Physica E, 2002 5. Degradace, metastabilita vs fotorezisty degradation at = 325 nm 80000 emission spectra: λexc =325 nm C H3 60000 -1 counts [s ] Si n 40000 20000 t deg 0 350 400 = 5, 10, 25, 40, 50 min 450 500 550 600 650 Degradation of luminescence in PMPSi photoluminescence emission spectra: λexc =350nm sample A4 -1 counts [s ] 60000 t=0 t=15 min t=30 min t=45 min 40000 20000 0 350 400 450 500 550 600 650 Degradation of luminescence in PMPSi A. Kadashchuk, S. Nespurek, N.Ostapenko, Yu. Skryshevskii and V. Zaika: Mol. Cryst.Liq. Cryst. 355(2001),413 Degradation of transport in PMPSi R. Handlí, F. Schauer, S.Nešp$rek, I. Kuitka, M. Weiter, and P.Schauer: beam, J. Non-Crystall. Solids (Hol.)227-230 (1998),669, Meta- stability in poly( methylsilylene) induced by UV radiation and electron Degradation of kathodoluminescence in PMPSi R. Handlí, F. Schauer, S.Nešp$rek, I. Kuitka, M. Weiter, and P.Schauer: beam, J. Non-Crystall. Solids (Hol.)227-230 (1998),669, Meta- stability in poly( methylsilylene) induced by UV radiation and electron Molecular weight degradation in PMPSi Degradation of PMPSi 'H EH Q & K H Q D Q G + X LS LQ J + X 6 W X GLH V RQ W K H E HK D YLRX U RI SK RW RG H JU D G D W LRQ RI S RO\ F\FORK H [\ OP HW K \ OV LOD Q H 0 D FU RP RO &K H P 3 K \ V Metastability in luminescence - PMPSi Nanostructural model photoluminescence emission spectra: =350nm λexc -1 counts ][s sample A4 60000 t=0 t=15 min t=30 min t=45 min 40000 20000 0 350 400 450 500 550 600 650 Nanostructural model =iYUHP Text pro orientaci
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